High bandwidth Ge p-i-n photodetector integrated on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337003
Reference11 articles.
1. New infrared detector on a silicon chip
2. J. Humlicek, in Properties of Silicon Germanium and SiGe: Carbon, EMIS Datareviews Series Vol. 24 (INSPEC (IEE), London, 2000), p. 249.
3. High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
4. High-Speed Germanium-on-SOI Lateral PIN Photodiodes
5. Resonant Cavity Enhanced Ge Photodetectors for 1550 nm Operation on Reflecting Si Substrates
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