Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers-Reference-Cited by-同舟云学术

Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers

Published:2023-09-01 Issue:5 Volume:41 Page:
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:

Author:

Stanchu Hryhorii¹,Said Abdulla²,Olorunsola Oluwatobi³⁴,Acharya Sudip²³,Amoah Sylvester³,Zamani-Alavijeh Mohammad⁵^ORCID,de Oliveira Fernando M.¹^ORCID,Chhetri Santosh Karki⁵,Hu Jin¹⁵^ORCID,Mazur Yuriy I.¹^ORCID,Yu Shui-Qing³^ORCID,Salamo Gregory¹^ORCID

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701

2. Material Science and Engineering Program, University of Arkansas 2 , Fayetteville, Arkansas 72701

3. Department of Electrical Engineering, University of Arkansas 3 , Fayetteville, Arkansas 72701

4. Microelectronics-Photonics Program, University of Arkansas 4 , Fayetteville, Arkansas 72701

5. Department of Physics, University of Arkansas 5 , Fayetteville, Arkansas 72701

Abstract

A study of the mechanism of Sn out-diffusion was performed by annealing Ge0.905Sn0.095 layers at 300 °C. The changes in Sn composition and strain state were confirmed by x-ray diffraction and photoluminescence spectroscopy. Surface defects, appearing as Sn particles, with the highest density of 3.5 × 108 cm−2 were detected by atomic force microscopy after annealing for 2 h. The strain in the GeSn layer stabilized for more prolonged annealing, while the density of particles decreased and their size increased. Annealing results are discussed in terms of Sn segregation and subsequent diffusion along dislocation lines, enhanced out-diffusion by dislocations migration, and surface particle coalescence.

Funder

Air Force Office of Scientific Research

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://pubs.aip.org/avs/jvb/article-pdf/doi/10.1116/6.0002957/18125042/052208_1_6.0002957.pdf

Reference41 articles.

1. SiGeSn Quantum Well for Photonics Integrated Circuits on Si Photonics Platform: A Review

2. The rise of the GeSn laser

3. Achieving direct band gap in germanium through integration of Sn alloying and external strain

4. Electronic band structure and effective mass parameters of Ge1-xSnx alloys

5. Tensile strained GeSn on Si by solid phase epitaxy

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