Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1630359
Reference23 articles.
1. Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam
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3. A slow positron beam study of vacancy formation in fluorine‐implanted silicon
4. Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy
5. Radiation damage and annealing behaviour of Ge+-implanted SiC
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2. Calculation of positron annihilation characteristics of six main defects in6H-SiC and the possibility to distinguish them experimentally;Physical Review B;2016-07-06
3. High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions;Semiconductors;2008-01
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