Oxygen-related defects in Si studied by variable-energy positron annihilation spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.13047/fulltext
Reference28 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
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3. Photo-EPR experiments on defects in irradiated silicon
4. Kinetic study of the 830- and 889-cm−1infrared bands during annealing of irradiated silicon
5. Oxygen isotope effect on the 889 cm−1band in silicon
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