Oxygen isotope effect on the 889 cm−1band in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96862
Reference10 articles.
1. Growth of the 889 cm−1 infrared band in annealed electron‐irradiated silicon
2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
3. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
4. Diffusivity of oxygen in silicon at the donor formation temperature
5. Rapid thermal annealing and regrowth of thermal donors in silicon
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