Growth of the 889 cm−1 infrared band in annealed electron‐irradiated silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96003
Reference4 articles.
1. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
3. New Oxygen Infrared Bands in Annealed Irradiated Silicon
4. Diffusivity of oxygen in silicon at the donor formation temperature
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4. Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior;Journal of Materials Science: Materials in Electronics;2013-12-13
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