High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions-Reference-Cited by-同舟云学术

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High-temperature nuclear-detector arrays based on 4 H-SiC ion-implantation-doped p +-n junctions

Published:2008-01 Issue:1 Volume:42 Page:86-91
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kalinina E. V.,Strokan N. B.,Ivanov A. M.,Sitnikova A. A.,Sadokhin A. V.,Azarov A. Yu.,Kossov V. G.,Yafaev R. R.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608010120.pdf

Reference28 articles.

1. C. P. Capera, P. Malinaric, R. B. Campbell, and J. Ostroski, IEEE Trans. Nucl. Sci. 11, 262 (1964).

2. G. F. Kholuyanov and B. V. Gavrilovskiĭ, Fiz. Tekh. Poluprovodn. (Leningrad) 2, 573 (1968) [Sov. Phys. Semicond. 2, 472 (1968].

3. V. A. Tikhomirova, O. P. Fedoseeva, and G. F. Kholuyanov, Fiz. Tekh. Poluprovodn. (Leningrad) 6, 957 (1972) [Sov. Phys. Semicond. 6, 831 (1972)].

4. V. A. Tikhomirova, O. P. Fedoseeva, and G. F. Kholuyanov, At. Énerg. 34, 122 (1973).

5. A. M. Ivanov, E. V. Kalinina, A. O. Konstantinov, et al., Pis’ma Zh. Tekh. Fiz. 30(14), 1 (2004) [Tech. Phys. Lett. 30, 575 (2004)].

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1. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum;Semiconductors;2010-06

2. Diffusion Al from implanted SiC layer;Physica B: Condensed Matter;2009-12

3. High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector;2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC);2009-10

4. Redistribution of Al in implanted SiC layers as a result of thermal annealing;Semiconductors;2009-05

5. Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions;Materials Science Forum;2009-03

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