Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/8/050/pdf
Reference23 articles.
1. Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes
2. Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling
3. High temperature Hall effect measurements of semi-insulating 4H–SiC substrates
4. On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield
5. The acceptor level for vanadium in 4H and 6H SiC
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1. First-principles calculations of the diffusion behaviors of C, N and O atoms in V metal;Acta Physica Sinica;2015
2. SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes;Chinese Physics B;2010-03
3. Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation;Chinese Physics B;2009-09-29
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