On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Silicon carbide for microwave power applications
2. Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates
3. Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer
4. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide
5. Electron spin resonance studies of transition metal deep level impurities in SiC
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2. <i>In Situ</i> Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules;Solid State Phenomena;2023-06-06
3. Influence of Optical Grating on the Triggering Efficiency of Vcsi Silicon Carbide Photoconductive Semiconductor Switch;2023
4. Effect of hydrogen on the unintentional doping of 4H silicon carbide;Journal of Applied Physics;2022-10-21
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