<i>In Situ</i> Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules

Abstract

The aim of this study is to show the applicability of continuous residual gas analysis for growth monitoring of undoped SiC with physical vapor transport (PVT). For this purpose, two crystals were grown, one without doping and one with continuous nitrogen doping. During the processes continuous residual gas analysis were conducted and evaluated with emphasis on the temporal variations of the nitrogen content. The charge carrier concentration of the final crystals was determined by optical methods (spectrally resolved absorption measurement with UV-VIS and Raman spectroscopy) and the results were compared with the residual gas analysis during growth. A correlation was found between the measured nitrogen-related signal and the charge carrier concentration in the samples.