Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates-Reference-Cited by-同舟云学术

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Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates

Published:1999-07 Issue: Volume:61-62 Page:389-394
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schöner A,Karlsson S,Schmitt T,Nordell N,Linnarsson M,Rottner K

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. R.D. Larrabee, W.R. Thurber, IEEE Trans. Elect. Dev., Vol. ED-27, 1980.

2. Theory and Realization of a Two-Layer Hall Effect Measurement Concept for Characterization of Epitaxial and Implanted Layers of SiC

3. Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiC

4. Global Band Structure and Near-Band-Edge States

5. Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment

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1. RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC;IEEE Transactions on Electron Devices;2020-08

2. Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy;Crystals;2020-02-21

3. Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates;Journal of Crystal Growth;2018-08

4. Electrical transport properties of p-type 4H-SiC;physica status solidi (a);2016-11-15

5. Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD;Applied Physics Express;2015-11-19

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