Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium-Reference-Cited by-同舟云学术

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Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Published:2016-10-31 Issue:18 Volume:109 Page:182107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kalliovaara T.¹,Slotte J.¹^ORCID,Makkonen I.¹^ORCID,Kujala J.¹,Tuomisto F.¹,Milazzo R.²^ORCID,Impellizzeri G.³,Fortunato G.⁴,Napolitani E.²^ORCID

Affiliation:

1. Department of Applied Physics, Aalto University, P.O. Box 15100, FIN-00076 Aalto, Espoo, Finland

2. Dipartimento di Fisica e Astronomia and CNR-IMM MATIS, Università di Padova, Via Marzolo 8, 35131 Padova, Italy

3. CNR-IMM, Via S. Sofia 64, 95123 Catania, Italy

4. CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma, Italy

Funder

Suomen Akatemia (Academy of Finland)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4966947

Reference38 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

3. Ion-implantation issues in the formation of shallow junctions in germanium

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