Formation and photoluminescence of GaAs1−xNx dilute nitride achieved by N-implantation and flash lamp annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4890114
Reference25 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
3. Reduced temperature dependence of the band gap inGaAs1−yNyinvestigated with photoluminescence
4. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
5. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
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