Reduced temperature dependence of the band gap inGaAs1−yNyinvestigated with photoluminescence-Reference-Cited by-同舟云学术

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Reduced temperature dependence of the band gap inGaAs1−yNyinvestigated with photoluminescence

Published:2002-06-18 Issue:23 Volume:65 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Polimeni A.,Bissiri M.,Augieri A.,Baldassarri Höger von Högersthal G.,Capizzi M.,Gollub D.,Fischer M.,Reinhardt M.,Forchel A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.235325/fulltext

Reference29 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Electronic Properties of Ga(In)NAs Alloys

3. Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer

4. Band Anticrossing in GaInNAs Alloys

5. Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure

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