Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.4430/fulltext
Reference28 articles.
1. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. GaInNAs: a novel material for long-wavelength semiconductor lasers
4. A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
5. N incorporation in InP and band gap bowing of InNxP1−x
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