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Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03

  • Published:1999-04-19 Issue:16 Volume:82 Page:3312-3315
  • ISSN:0031-9007
  • Container-title:Physical Review Letters
  • language:en
  • Short-container-title:Phys. Rev. Lett.

Author:

Perkins J. D.,Mascarenhas A.,Zhang Yong,Geisz J. F.,Friedman D. J.,Olson J. M.,Kurtz Sarah R.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

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