Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108691
Reference8 articles.
1. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
2. Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells
3. Nitrogen pair luminescence in GaAs
4. Calculation of the Solubility and Solid-Gas Distribution Coefficient of N in GaP
5. Hydride VPE Growth of GaAs for FET's
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