Affiliation:
1. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
Abstract
The fitting process of the deep learning model based on few-shot algorithm within 300 epochs is shown (a), and the best predictive model demonstrates good performance in predicting band gap values of diluted doped semiconductors (b).
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Natural Science Foundation of Sichuan Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Cited by
3 articles.
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