Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102530
Reference6 articles.
1. Low Temperature Growth of Gallium Nitride
2. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
3. Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
4. Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
5. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs
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