Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing-Reference-Cited by-同舟云学术

Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing

Published:2018-12-28 Issue:8 Volume:216 Page:1800618
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Duan Juanmei¹²³^ORCID,Wang Mao¹³,Vines Lasse⁴,Böttger Roman¹,Helm Manfred¹,Zeng Yu‐Jia²,Zhou Shengqiang¹,Prucnal Slawomir¹

Affiliation:

1. Helmholtz‐Zentrum Dresden‐Rossendorf, Institute of Ion Beam Physics and Materials ResearchBautzner Landstrasse 40001328 DresdenGermany

2. College of Optoelectronic Engineering, Shenzhen UniversityShenzhen 518060P. R. China

3. Technische Universität Dresden01062 DresdenGermany

4. Department of Physics/Centre for Materials Science and Nanotechnology, University of OsloP.O. Box 1048 BlindernN‐0316 OsloNorway

Funder

China Scholarship Council

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800618

Reference36 articles.

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2. Band parameters for III–V compound semiconductors and their alloys

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5. Dopants and Defects in Semiconductors

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