Reduction in crystallographic surface defects and strain in 0.2‐μm‐thick silicon‐on‐sapphire films by repetitive implantation and solid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93222
Reference9 articles.
1. Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques
2. Improvement of crystalline quality of epitaxial silicon-on-sapphire by ion implantation and furnace regrowth
3. Furnace and cw Ar laser induced solid-phase epitaxial regrowth of SOS films implanted with Si, Si + B, P and P + B ions
4. Crystalline disorder reduction and defect‐type change in silicon on sapphire films by silicon implantation and subsequent thermal annealing
5. Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices
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1. Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction;Journal of Electron Microscopy;2006-04-03
2. Channeling Alignment for Epitaxial Light-Mass Film on Heavy-Mass Substrate;Chinese Physics Letters;1994-05
3. Electrical and crystallographic evaluation of SOS iimplanted with silicon and/or oxygen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03
4. Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films;Electronics Letters;1985
5. MOSFET performance enhancement by improved SOS material processes;Microelectronics Journal;1984-09
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