Crystalline disorder reduction and defect‐type change in silicon on sapphire films by silicon implantation and subsequent thermal annealing

Author:

Inoue Tomoyasu,Yoshii Toshio

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 46 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-07

2. Production, Characterization and Application of Silicon-on-Sapphire Wafers;Key Engineering Materials;2010-06

3. Hydrogenation effect on silicon on sapphire grown by rapid thermal chemical vapor deposition;Physica E: Low-dimensional Systems and Nanostructures;2003-03

4. Bipolar Transistors on Si / MgO · Al2 O 3 / Si;Journal of The Electrochemical Society;1992-10-01

5. Exploiting Si/CoSi2/Si heterostructures grown by mesotaxy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07

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