Electrical and crystallographic evaluation of SOS iimplanted with silicon and/or oxygen
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Characterization of defect reduction and aluminum redistribution in silicon implanted SOS films
2. Suppressing Al outdiffusion in implantation amorphized and recrystallized silicon on sapphire films
3. Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques
4. Electrical properties of silicon-implanted furnace-annealed silicon-on-sapphire devices
5. Crystalline quality improvement of SOS films by SI implantation and subsequent annealing
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structurally perfect silicon layers produced on sapphire by oxygen ion implantation;Inorganic Materials;2011-05-25
2. Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions;Semiconductors;2009-05
3. Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits;Microelectronic Engineering;1988-08
4. Influence of implantation induced damage in sapphire upon improvement of crystalline quality of silicon on sapphire;Applied Physics Letters;1985-12-15
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