Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits-Reference-Cited by-同舟云学术

Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits

Published:1988-08 Issue:1-2 Volume:8 Page:79-91
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Smeltzer R.K.,Schnable G.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference90 articles.

1. Special Issue on SOS Technology,1978

2. Performance of downward scaled CMOS/SOC;Taguchi;1979 IEDM Technical Digest,1979

3. The properties of silicon-on-sapphire substrates, devices, and integrated circuits;Ipri,1981

4. Comparison of new technologies for VLSI: Possibilities and limitations;Nishi;Microelectronics J.,1981

5. SOS/CMOS as a high-performance LSI device;Okuto;IEEE Trans. Electron Devices,1982

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1. Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-01

2. The Fabrication of Thin, Freestanding, Single‐Crystal, Semiconductor Membranes;Journal of The Electrochemical Society;1990-08-01

3. The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures;IEEE Transactions on Electron Devices;1990-05

4. An analytical model for the MISIS structure in SOI MOS devices;Solid-State Electronics;1990-03