Characterization of defect reduction and aluminum redistribution in silicon implanted SOS films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
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Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improvement in off-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film;IEEE Transactions on Electron Devices;2011-11
2. Matrix study of material improvement of SOS by DSPEG;Journal of Crystal Growth;1987-01
3. New DSPEG Approach to Improvement of SOS Using Low Dose Self-Implantations;MRS Proceedings;1986
4. Influence of implantation induced damage in sapphire upon improvement of crystalline quality of silicon on sapphire;Applied Physics Letters;1985-12-15
5. Electrical and crystallographic evaluation of SOS iimplanted with silicon and/or oxygen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03
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