Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions-Reference-Cited by-同舟云学术

Specific features of solid-phase recrystallization of silicon-on-sapphire structures amorphized by oxygen ions

Published:2009-05 Issue:5 Volume:43 Page:599-601
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov P. A.,Demakov K. D.,Shemardov S. G.,Kuznetsov Yu. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609050108.pdf

Reference14 articles.

1. Yu. F. Kozlov and V. V. Zotov, Structures of Silicon on Sapphire: Technology, Properties, Control Methods, Applications (MIÉT, Moscow, 2004) [in Russian].

2. A. Yu. Ignatov, V. S. Postolov, and A. S. Filimonov, in Proc. of the VI Intern. Conf. on Chemistry of Solid State and Modern Micro- and Nanotechnologies (Kislovodsk, Stavropol’, 2006), p. 510.

3. T. Inoue and T. Yoshii, Nucl. Instrum. Methods Phys. Res. 182–183, 683 (1981).

4. I. Golecki, US Patent No. 4, 588447 (1986).

5. R. E. Reedy, T. W. Sigmon, and L. A. Christel, Appl. Phys. Lett. 42, 707 (1983).

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