Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616990
Reference17 articles.
1. Process and device technologies for 1 Gbit dynamic random-access memory cells
2. Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy
3. Electronic structure of oxygen vacancy in Ta2O5
4. A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing inO2orN2Oby Zero-Bias Thermally Stimulated Current Spectroscopy
5. Tantalum pentoxide for advanced DRAM applications
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