Electronic structure of oxygen vacancy in Ta2O5
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370831
Reference20 articles.
1. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
2. Effects of additive elements on electrical properties of tantalum oxide films
3. Dielectric constant dependence of Poole-Frenkel potential in tantalum oxide thin films
4. Effect of rapid thermal annealing treatment on electrical properties and microstructure of tantalum oxide thin film deposited by plasma‐enhanced chemical vapor deposition
5. Extended x‐ray absorption fine structure analysis of the difference in local structure of tantalum oxide capacitor films produced by various annealing methods
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