Effect of rapid thermal annealing treatment on electrical properties and microstructure of tantalum oxide thin film deposited by plasma‐enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Effect of rapid thermal annealing treatment on electrical properties and microstructure of tantalum oxide thin film deposited by plasma‐enhanced chemical vapor deposition

Published:1995-06 Issue:11 Volume:77 Page:5978-5981
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jeon Seok Ryong,Han Sung Wook,Park Jong Wan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359180

Reference14 articles.

1. Quadruply self-aligned stacked high-capacitance RAM using Ta2O5high-density VLSI dynamic memory

2. Structural and Electrical Properties of Ta2O5Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source

3. Electrical and charge storage characteristics of the tantalum oxide-silicon dioxide device

4. Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic Memories

5. Electrical properties of amorphous tantalum pentoxide thin films on silicon

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