A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing inO2orN2Oby Zero-Bias Thermally Stimulated Current Spectroscopy-Reference-Cited by-同舟云学术

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A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing inO2orN2Oby Zero-Bias Thermally Stimulated Current Spectroscopy

Published:1996-05-15 Issue:Part 1, No. 5A Volume:35 Page:2599-2604
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lau Wai Shing,Khaw Kee Keong,Qian Peng Wei,Sandler Nathan P.,Chu Paul K.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical active defects in HfO2based metal/oxide/metal devices;Journal of Physics D: Applied Physics;2015-11-25

2. Ion implantation synthesis and conduction of tantalum oxide resistive memory layers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01

3. Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa$_{2}$O$_{6}$ Thin-Film Capacitors;Japanese Journal of Applied Physics;2012-09-20

4. Thermally Stimulated Current Analysis of Defects in Sol–Gel Derived SrTa2O6Thin-Film Capacitors;Japanese Journal of Applied Physics;2012-09-01

5. Annealing and Composition Effects of (BaxSr1-x)Ta2O6Thin Films Fabricated by Sol–Gel Method;Japanese Journal of Applied Physics;2010-09-21

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