Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1949290
Reference20 articles.
1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
2. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
3. Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
4. Heavily carbon-doped GaAsSb grown on InP for HBT applications
5. Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD
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2. DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors;IEEE Transactions on Electron Devices;2010-12
3. InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with high current gain and low base sheet resistance;2009 IEEE International Conference on Indium Phosphide & Related Materials;2009-05
4. Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs;Solid-State Electronics;2008-08
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