High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With $F_{T} ≫ \hbox{420}\ \hbox{GHz}$-Reference-Cited by-同舟云学术

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High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With $F_{T} ≫ \hbox{420}\ \hbox{GHz}$

Published:2007-10 Issue:10 Volume:54 Page:2792-2795
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Honggang,Ostinelli Olivier,Zeng Yuping,Bolognesi Colombo R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4317723/04317737.pdf?arnumber=4317737

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs;Journal of Crystal Growth;2014-06

2. InGaAs/GaAsSb based two-dimensional electron gases;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03

3. Si doping of MBE grown bulk GaAsSb on InP;Journal of Crystal Growth;2011-05

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