Heavily carbon-doped GaAsSb grown on InP for HBT applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
2. Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
3. Mechanism of carbon incorporation from carbon tetrabromide in GaAs grown by metalorganic chemical vapor deposition
4. Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
5. Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
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3. Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys;Applied Physics Letters;2021-12-13
4. Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method;Journal of Alloys and Compounds;2016-02
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