Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
Author:
Funder
ESOGU BAP
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference24 articles.
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3. Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs;Rebey;Microelectron. J.,2004
4. Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy;Saito;J. Appl. Phys.,1988
5. Photoluminescence in carbon-doped GaAs grown by atmospheric-pressure metalorganic chemical vapor deposition;Cho;J. Korean Phys. Soc.,1998
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