Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123428
Reference11 articles.
1. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition
2. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors
3. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
4. Fabrication and characterization of high-performance InP/InGaAs double-heterojunction bipolar transistors
5. Influence of lattice mismatch on the crystalline quality of metastable GaAsSb grown by metalorganic chemical vapor deposition
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