Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD-Reference-Cited by-同舟云学术

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Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD

Published:2004-01 Issue:2-3 Volume:261 Page:393-397
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Oda Yasuhiro,Watanabe Noriyuki,Uchida Masahiro,Sato Michio,Yokoyama Haruki,Kobayashi Takashi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

2. InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition

3. Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

4. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy

5. A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

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1. Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation;Materials;2022-08-26

2. LPE growth and optical characteristics of GaAs 1− x Sb x epilayer;Journal of Crystal Growth;2017-04

3. P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2014-12-22

4. Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs;Journal of Crystal Growth;2014-06

5. Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2013-10

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