P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

Published:2014-12-22 Issue:1 Volume:54 Page:015506
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yokoyama Haruki,Hoshi Takuya

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=1/a=015506/pdf

Reference35 articles.

1. Growth and properties of GaAsSb/InGaAs superlattices on InP

2. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

3. Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

4. Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors

5. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys;Applied Physics Letters;2021-12-13

2. High electric field transport in GaAs0.51Sb0.49;Semiconductor Science and Technology;2021-03-22

3. Ultra-thin films for plasmonics: a technology overview;Nanotechnology Reviews;2015-01-01

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