Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors-Reference-Cited by-同舟云学术

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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Published:2011-03-07 Issue:10 Volume:98 Page:103509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ji Kwang Hwan,Kim Ji-In,Jung Hong Yoon,Park Se Yeob,Choi Rino,Kim Un Ki,Hwang Cheol Seong,Lee Daeseok,Hwang Hyungsang,Jeong Jae Kyeong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3564882

Reference18 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

3. 12.1-in. WXGA AMOLED display driven by InGaZnO thin-film transistors

4. Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors

5. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

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3. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10

4. Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors;Silicon;2024-08-08

5. Control of hydrogen concentration on InGaZnO thin film using cryopumping system;Vacuum;2024-03

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