Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12633-024-03105-6.pdf
Reference32 articles.
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4. Kim B, Chong E, Do Kim H, Woo Jeon Y, Hwan Kim D, Yeol Lee S (2011) Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress. Appl Phys Lett 99(6)
5. Mativenga M, Hong S, Jang J (2013) High current stress effects in amorphous-InGaZnO$$_4$$ thin-film transistors. Appl Phys Lett 102(2)
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