Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3601480
Reference11 articles.
1. C. Claeys and E. Simoen,Germanium-Based Technologies, 1st ed. (Elsevier, Oxford, 2007), p. 295.
2. Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering
3. Fabrication of Ge Metal–Oxide–Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2Bilayer Passivation and Postmetallization Annealing Effect of Al
4. On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
5. Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2Solution and Hf Metal Hard Mask
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1. Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium;Applied Physics Letters;2023-05-08
2. Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeO x /(111) and (100) n-Ge MOS structures;Japanese Journal of Applied Physics;2023-03-10
3. Characterization of GeO2 films formed on Ge substrate using high pressure oxidation;Journal of Vacuum Science & Technology B;2021-07
4. Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET;AIP Advances;2020-06-01
5. Effects of post-metallisation annealing on surface–interfacial and electrical properties of HfO2/Ge stacks modified in situ with SiO2 interfacial layer;Materials Research Express;2019-05-24
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