Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH4OH/H2O2Solution and Hf Metal Hard Mask
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference14 articles.
1. Application of HfSiON as a gate dielectric material
2. Investigation of the Thermal Stability of Reactively Sputter-Deposited TiN MOS Gate Electrodes
3. Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications
4. Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in<tex>$hbox TaN/SiO_2$</tex>Gate Stack
5. Work function tuning of metal nitride electrodes for advanced CMOS devices
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1. High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression;Applied Physics Express;2022-06-23
2. The effective Work-Function of atomic layer deposited TaN thin film using TBTDET precursor and NH3 reactant gas;Applied Surface Science;2022-03
3. Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge;Journal of Applied Physics;2015-09-21
4. Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation;Applied Physics Letters;2011-06-20
5. Low Pressure Chemical Vapor Deposition of Aluminum-Doped Zinc Oxide for Transparent Conducting Electrodes;Journal of The Electrochemical Society;2011
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