High channel mobility of 3C-SiC n-MOSFETs with gate stacks formed at low temperature—the importance of Coulomb scattering suppression

Abstract

Abstract We fabricated n-channel MOSFETs with various gate dielectrics on (111) oriented 3C-SiC/Si. Fabricated MOSFETs operated as inversion mode devices successfully. The MOSFET with sputter-deposited SiO2/plasma oxidized interlayer showed a high peak field-effect mobility of 131 cm2 V−1 s−1. The gate stack can be formed at a low temperature of 400 °C, which means the process is absolved from high-temperature thermal oxidation for a gate stack. The detailed analysis of charges and traps in the gate stacks clarified that Coulomb scattering is well-suppressed in the inversion channel. These results will be the first step for a high-performance 3C-SiC application, including on-chip hetero-integrated electronic devices.