Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET
Author:
Affiliation:
1. Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
2. Global Innovation Center, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0002100
Reference39 articles.
1. III–V/Ge channel MOS device technologies in nano CMOS era
2. Germanium CMOS potential from material and process perspectives: Be more positive about germanium
3. Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate
4. Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate
5. Spin transport and relaxation in germanium
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