Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering-Reference-Cited by-同舟云学术

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Published:2011-06 Issue:1 Volume:60 Page:122-127
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hirayama Kana,Yoshino Keisuke,Ueno Ryuji,Iwamura Yoshiaki,Yang Haigui,Wang Dong,Nakashima Hiroshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Ge-interface engineering with ozone oxidation for low interface-state density;Kuzum;IEEE Electron Dev Lett,2008

2. Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures;Maeda;Appl Phys Lett,2007

3. Electrical properties of germanium/metal–oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers;Sugawara;Appl Phys Lett,2007

4. Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2;Houssa;Appl Phys Lett,2008

5. Evidence of low interface trap density in GeO2/Ge metal–oxide-semiconductor structures fabricated by thermal oxidation;Matsubara;Appl Phys Lett,2008

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2. High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis;Japanese Journal of Applied Physics;2020-02-28

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