Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2679941
Reference14 articles.
1. Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
2. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
3. Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
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