Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate-Reference-Cited by-同舟云学术

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Published:2004-05-10 Issue:19 Volume:84 Page:3741-3743
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu Nan,Zhang Qingchun,Zhu Chunxiang,Yeo Chia Chin,Whang S. J.,Chan D. S. H.,Li M. F.,Cho Byung Jin,Chin Albert,Kwong Dim-Lee,Du A. Y.,Tung C. H.,Balasubramanian N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1737057

Reference11 articles.

1. Self-aligned germanium MOSFETs using a nitrided native oxide gate insulator

2. High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

3. A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate

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