High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric-Reference-Cited by-同舟云学术

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High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Huiling Shang ,Okorn-Schmidt H.,Chan K.K.,Copel M.,Ott J.A.,Kozlowski P.M.,Steen S.E.,Cordes S.A.,Wong H.-S.P.,Jones E.C.,Haensch W.E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175873.pdf?arnumber=1175873

Cited by 161 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition;2023

2. High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs;IEEE Journal of the Electron Devices Society;2023

3. Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices;Electronics;2022-08-03

4. Mobility improvement in accumulation-mode GeOI pMOSFETs with back interface rearrangement by H₂ annealing;Applied Physics Express;2022-05-20

5. Ti Interlayer Mediated Uniform NiGe Formation under Low-Temperature Microwave Annealing;Metals;2021-03-15

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