Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2472197
Reference21 articles.
1. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), 2nd ed., p. 46.
2. Determination of interface energy band diagram between (100)Si and mixed Al–Hf oxides using internal electron photoemission
3. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
4. Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition
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