Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by spectroscopic ellipsometry using different optical models
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351014
Reference28 articles.
1. Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometry
2. Ellipsometric study of tellurium implanted silicon
3. Damage profile determination of ion‐implanted Si layers by ellipsometry
4. A four‐phase complex refractive index model of ion‐implantation damage: Optical constants of phosphorus implants in silicon
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