Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry-Reference-Cited by-同舟云学术

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Published:2022-12 Issue: Volume:152 Page:107062
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Lohner Tivadar,Németh Attila,Zolnai Zsolt,Kalas Benjamin,Romanenko Alekszej,Khánh Nguyen Quoc,Szilágyi Edit,Kótai Endre,Agócs Emil,Tóth Zsolt,Budai Judit,Petrik Péter^ORCID,Fried Miklós,Bársony István,Gyulai József

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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